vs-60ctq...pbf series, vs-60ctq...-n3 series www.vishay.com vishay semiconductors revision: 29-aug-11 1 document number: 94239 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 2 x 30 a features ? 150 c t j operation ? low forward voltage drop ? high frequency operation ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and mois ture resistance ? guard ring for enhanced ruggedness and long term reliability ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description this center tap schottky rectif ier has been optimized for low reverse leakage at high tempe rature. the proprietary barrier technology allows for reliable operation up to 150 c junction temperature. typical applications are in switching power supplies, converters , freewheeling diodes, and reverse battery protection. product summary package to-220ab i f(av) 2 x 30 a v r 35 v, 40 v, 45 v v f at i f 0.53 v i rm max. 250 ma at 125 c t j max. 150 c diode variation common cathode e as 20 mj anode 13 2 base common cathode 2 common cathode anode to-220ab major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform (per device) 60 a v rrm 35 to 45 v i frm t c = 113 c (per leg) 60 a i fsm t p = 5 s sine 1500 v f 30 a pk , t j = 125 c 0.53 v t j range - 65 to 150 c voltage ratings parameter symbol vs- 60ctq035pbf vs- 60ctq035-n3 vs- 60ctq040pbf vs- 60ctq040-n3 vs- 60ctq045pbf vs- 60ctq045-n3 units maximum dc reverse voltage v r 35 35 40 40 45 45 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current per leg i f(av) 50 % duty cycle at t c = 113 c, rectan gular waveform 30 a per device 60 peak repetitive forward current per leg i frm rated v r , square wave, 20 khz, t c = 113 c 60 maximum peak one cycle non-repetitive surge current per leg i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 1500 10 ms sine or 6 ms rect. pulse 300 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 3 a, l = 4.40 mh 20 mj repetitive avalanche current per leg i ar current decaying linear ly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 3a
vs-60ctq...pbf series, vs-60ctq...-n3 series www.vishay.com vishay semiconductors revision: 29-aug-11 2 document number: 94239 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions typ. max. units maximum forward voltage drop v fm (1) 30 a t j = 25 c 0.51 0.56 v 60 a 0.66 0.72 30 a t j = 125 c 0.48 0.53 60 a 0.68 0.75 maximum instantaneous reverse current i rm t j = 25 c rated dc voltage 0.33 2 ma t j = 125 c 145 250 maximum junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c 2000 pf typical series inductance l s measured from top of terminal to mounting plane 8.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j - 65 to 150 c maximum storage temperature range t stg - 65 to 175 maximum thermal resistance, junction to case per leg r thjc dc operation 1.2 c/w typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.50 approximate weight 2g 0.07 oz. mounting torque minimum non-lubricated threads 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ab 60ctq035 60ctq040 60ctq045
vs-60ctq...pbf series, vs-60ctq...-n3 series www.vishay.com vishay semiconductors revision: 29-aug-11 3 document number: 94239 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristic s fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 0.8 1.2 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.4 0 0.2 0.6 1.0 1.4 1000 t j = 150 c t j = 125 c t j = 25 c 0.1 1 10 100 0.01 0 v r - reverse voltage (v) i r - reverse current (ma) 40 45 1000 30 20 35 10 25 15 5 t j = 150 c t j = 25 c t j = 50 c t j = 100 c t j = 125 c t j = 75 c 10 000 02030 v r - reverse voltage (v) c t - junction capacitance (pf) 10 1000 35 40 45 100 25 15 5 t j = 25 c 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single p u lse (thermal resistance) 1 d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 0.01 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c p dm t 1 t 2 10
vs-60ctq...pbf series, vs-60ctq...-n3 series www.vishay.com vishay semiconductors revision: 29-aug-11 4 document number: 94239 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-repeti tive surge current (per leg) note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 70 030 i f(av) - average forward current (a) allowable case temperature (c) 100 140 80 120 20 15 10 5 see note (1) 25 160 60 90 110 130 150 s qu are w a v e (d = 0.50) 80 % rated v r applied 35 40 45 dc 0 025 20 average power loss (w) i f(av) - average forward current (a) 5 101520 d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 30 10 15 5 35 40 45 25 30 dc rms limit 100 1000 t p - square wave pulse duration (s) i fsm - non-repetitive surge current (a) 100 10 000 10 10 000 1000 at any rated load condition and w ith rated v rrm applied follo w ing s u rge
vs-60ctq...pbf series, vs-60ctq...-n3 series www.vishay.com vishay semiconductors revision: 29-aug-11 5 document number: 94239 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-60CTQ035PBF 50 1000 antistatic plastic tube vs-60ctq035-n3 50 1000 antistatic plastic tube vs-60ctq040pbf 50 1000 antistatic plastic tube vs-60ctq040-n3 50 1000 antistatic plastic tube vs-60ctq045pbf 50 1000 antistatic plastic tube vs-60ctq045-n3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95222 part marking information to-220ab pbf www.vishay.com/doc?95225 to-220ab -n3 www.vishay.com/doc?95028 035 = 35 v 040 = 40 v 045 = 45 v device code 6 2 4 3 5 7 60 c t q 045 pbf vs- 1 2 - current rating (60 = 60 a) 3 - circuit configuration c = common cathode 4 - package t = to-220 5 - schottky ?q? series 6 - voltage ratings 7 - pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant, and totally lead (pb)-free 1 - vishay semiconductors product environmental digit
document number: 95222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ab outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0.005" ) per side. these dimensions are measured at the outermost extremes of th e plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimensions: inches (6) thermal pad contour optional within dimensions e, h1, d2 and e1 (7) dimensions e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to- 220, except a2 (maximum) and d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 6.86 8.89 0.270 0.350 6 a2 2.56 2.92 0.101 0.115 e2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 d 14.85 15.25 0.585 0.600 3 q 2.60 3.00 0.102 0.118 d1 8.38 9.02 0.330 0.355 ? 90 to 93 90 to 93 d2 11.68 12.88 0.460 0.507 6 13 2 d d1 h1 q 13 2 c c d d 3 x b2 3 x b (b, b2) b1, b3 (h1) d2 detail b c a b l e1 lead tip e e2 ? p 0.014 a b m m 0.015 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220ab (6) (6) (7) (6) (7) e 2 x l1 (2) detail b s ection c - c and d - d view a - a ba s e metal plating (4) (4) c1 c (6) thermal pad (e) e1 (6)
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